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Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures

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7 Author(s)
Chen, Chun-Yuan ; Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China ; Chiou, Wen-Huei ; Chih-Hung Yen ; Chuang, Hung-Ming
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The dc performances of an interesting InP/InGaAs tunneling-emitter bipolar transistor (TEBT) with double heterostructures are studied and demonstrated. The studied device has a higher breakdown voltage than conventional InP single heterojunction bipolar transistors between the collector and base. The base–collector junction breakdown voltage VBR up to 15.6 V is obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Furthermore, low variations of dc current gains are found as the temperature is increased from 25 to 175 °C. The elimination of knee-shaped characteristics and near unity ideality factors of collector and base currents C and ηB) are obtained due to the use of a δ-doping sheet and spacer layer. In addition, the studied TEBT device has a stable dc current gain distributed regime as the temperature is increased from 25 to 175 °C. © 2003 American Vacuum Society.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:21 ,  Issue: 1 )