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Au/Ge-based Ohmic contact to an AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer

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4 Author(s)
Lee, Jong-Lam ; Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH), Pohang 790-784, Korea ; Kim, Yi-Tae ; Yoo, Hyung Mo ; Lee, Gi Young

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The effect of existence of undoped GaAs/AlGaAs cap layers on Ohmic contact resistivity in an AlGaAs/InGaAs pseudomorphic high electron mobility transistor was investigated. The Au/Ge/Ni/Au Ohmic contact formed on the undoped GaAs cap layer yields the lowest contact resistivity of 3.8×10-6 Ω cm2. Meanwhile, the contact resistivity increases a little to 5.0×10-6 Ω cm2 for the contacts formed on an n-Al0.23Ga0.77As layer exposed by removing the undoped cap layer. Both contact resistivities are comparable to those obtained using the n+-GaAs cap layer. The good Ohmic contacts obtained independent of removal of the undoped cap layer are due to the formation of the interfacial compounds, Au2Al and Au2Ga, during annealing. The interfacial compounds penetrate deep into the buried InGaAs channel, resulting in direct contacts to the channel. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 3 )

Date of Publication:

May 1999

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