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Model for etch depth dependence on GaAs via hole diameter

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3 Author(s)
Abraham-Shrauner, Barbara ; Department of Electrical Engineering, Washington University, St. Louis, Missouri 63130 ; Nordheden, Karen J. ; Lee, Yao-Sheng

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.590677 

Reactive ion etching of via holes for grounding of monolithic microwave integrated circuits has become the industry standard. It is well known that the via etch rate decreases as a function of decreasing via mask diameter as well as increasing etch depth. A model has been developed which relates the experimental etch rates in Cl2/BCl3/Ar plasmas to the ion and neutral fluxes incident on the wafer. This model provides a useful tool for designers and process engineers to predict etch depths and average etch rates as functions of via diameter and total etch time. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:17 ,  Issue: 3 )

Date of Publication:

May 1999

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