Low energy ion beam etching of InP using methane chemistry

Reactive ion beam etching (RIBE) and chemically assisted ion beam etching (CAIBE) of InP at room temperature have been performed, using an inductively coupled plasma source. Two types of chemistries were used: N₂/CH₄/H₂ and Ar/CH₄/H₂. The etch rate, surface roughness and anisotropy were investigated for different process parameters. In hydrocarbon chemistry polymer buildup is a commonly encountered problem and therefore efforts were also devoted to minimize the polymer growth. Comparing the two chemistries it was found that the Ar based processes always lead to rougher surfaces, while the N₂ based chemistry at low ion energies (≪100 eV) results in very smooth surfaces for both types of ion beam processes. However, the CAIBE process not only provides smooth surfaces, but also generates much less polymers than its RIBE counterpart. CAIBE, using N₂/CH₄/H₂ chemistry, is then identified as a promising candidate for fabrication of nanometer sized structures. In addition, the low polymer growth is also advantageous from an equipment service point of view. © 1998 American Vacuum Society.