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Effects of geometry and material properties for stacked IC package with spacer structure

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3 Author(s)
Ming-Che Hsieh ; EOL/Ind. Technol. Res. Inst., Hsinchu ; Chih-Kung Yu ; Wei Lee

As the electronic industry is making its progress to miniaturize high performance, smaller and lower-priced IC packages, 3D packaging technologies are presently used to achieve these goals. Although 3D packaging technologies are vastly studied and applied to perform better performance, low power consumption and smaller packaging size of IC packages, thermo-mechanical problems occur as well due to the 3D stacking feature. Because chips are vertically stacking in 3D packages, higher thermal resistances are resulted and their corresponding induced thermal stresses and heat dissipations are becoming major reliability concerns. In order to realize thermal stresses distributions in stacked IC packages with spacer structures, the three dimensional finite element analysis (FEA) modeling has been employed. For the purpose of studying effects of geometry and material properties of stacked IC package with spacer structure, several comparisons of variations of geometry and materials are discussed in this paper. Through these comparisons, effects of material properties of spacer structures in stacked IC packages and those resulted in stresses distributions of copper TSV (through-silicon-vias), dies and spacers can be presented. Moreover, effects of geometry of die and copper TSV size, die stacking number, TSV distributions as well as TSV/bump pitch and spacer/bump thickness are also illustrated. These results will be helpful design guidelines to engineers if optimization designs for stress solutions in stacking IC package with spacer structure are needed.

Published in:

Thermal, Mechanical and Multi-Physics simulation and Experiments in Microelectronics and Microsystems, 2009. EuroSimE 2009. 10th International Conference on

Date of Conference:

26-29 April 2009