Referenced Items are not available for this document.
The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF 6/Ar mixtures. It was found that while the plug loading effect is independent of varying SF6/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology
Published in:
Semiconductor Manufacturing, IEEE Transactions on
(Volume:9
,
Issue:
2
)
Date of Publication: May 1996
- Page(s):
- 289 - 291
- ISSN :
- 0894-6507
- INSPEC Accession Number:
- 5278528
- Digital Object Identifier :
- 10.1109/66.492826
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1996
- Sponsored by :
- IEEE Components, Packaging and Manufacturing Technology Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
