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An independent-double-gate (IDG) fin-type MOSFET (FinFET) SRAM has been successfully fabricated with considerable leakage current reduction. The new SRAM consists of IDG-FinFETs which have flexible V th controllability. The IDG-FinFET with a TiN metal gate is fabricated by a newly developed gate-separation etching process. By appropriately controlling the V th of the IDG-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM circuitry.