By Topic

Development of temperature-stable thick-film dielectrics. I. Low K dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Bi-Shiou Chiou ; Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

A temperature-stable low-dielectric constant (K~10) thick-film dielectric was developed. Dielectric formulations were prepared by combining appropriate amounts of α-Al2O3, γ-Al2O3, or TiO2 with Frit G1 and/or Frit G2. A dual frit approach proves to be an effective method in eliminating the pinhole problems in the fabrication of thick-film capacitors. Substrate bodies and diffusion of electrode and substrate ingredients into the dielectric are two major factors which affect the dielectric properties of the capacitors. The low-K dielectric developed in this study can work adequately from 25°C to 500°C, and at 500°C for an extended period of time

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:12 ,  Issue: 4 )