By Topic

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Susai Lawrence Selvaraj ; Res. Center for Nano-Device & Syst., Nagoya Inst. of Technol., Nagoya, Japan ; Takaaki Suzue ; Takashi Egawa

We have achieved a 9 ??m-thick AlGaN/GaN high-electron mobility transistor (HEMT) epilayer on silicon using thick buffer layers with reduced dislocation density (DD). The crack-free 9 ??m-thick epilayer included 2 ??m i-GaN and 7 ??m buffer. The HEMTs fabricated on these devices showed a maximum drain-current density of 625 mA/mm, transconductance of 190 mS/mm, and a high three-terminal OFF breakdown of 403 V for device dimensions of LgWgLgd=1.5/15/3 ??m . Without using a gate field plate, this is the highest BV reported on an AlGaN/GaN HEMT on silicon for a short Lgd of 3 ??m. A very high BV of 1813 V across 10 ??m ohmic gap was achieved for i-GaN grown on thick buffers. As the thickness of buffer layers increased, the decreased DD of GaN and increased resistance between surface electrode and substrate yielded a high breakdown.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 6 )