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14-GHz GaNAsSb Unitraveling-Carrier 1.3- \mu\hbox {m} Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

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13 Author(s)
Kian Hua Tan ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Yoon, S.F. ; Fedderwitz, S. ; Stohhr, A.
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We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-mum GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. The 0.1-mum -thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and -9 V are 6 and 34 mA/cm2, respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 6 )