Referenced Items are not available for this document.
A turn-off failure mode in individual MOS-controlled thyristors (MCTs), initiated by a long gate voltage rise-time, is identified and analyzed. It is shown to be caused by turn-off current crowding in the MCT. In addition, a differential failure mode in paralleled devices is demonstrated in which the slower of the two MCTs fails to turn off. This is caused by the increase in anode current through the slower device and the decrease in gate voltage rise-time due to the MCTs Miller capacitance
Published in:
Power Electronics, IEEE Transactions on
(Volume:11
,
Issue:
2
)
Date of Publication: Mar 1996
- Page(s):
- 299 - 303
- ISSN :
- 0885-8993
- INSPEC Accession Number:
- 5229013
- Digital Object Identifier :
- 10.1109/63.486179
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Mar 1996
- Sponsored by :
- IEEE Power Electronics Society
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