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COS-based Q-V testing: in-line options for oxide charge monitoring

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4 Author(s)
Horner, G.S. ; Keithley Instrum. Inc., Cleveland, OH, USA ; Fung, M.-S. ; Verkuil, R.L. ; Miller, T.G.

The strict demands for wafer cleanliness and impurity elimination outlined in the Semiconductor Industry Association's Technology Roadmap require that new monitoring methods be developed for measurement of oxide contamination. A newly available technology is presented here that will help manufacturers achieve the goals of oxide contamination monitoring and feedforward control. The technique is based on the principles of capacitance-voltage (C-V) monitoring, but the measurements are performed in a noncontacting fashion, thus greatly speeding the return of information to the user.

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1995. ASMC 95 Proceedings. IEEE/SEMI 1995

Date of Conference:

13-15 Nov 1995

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