Cart (Loading....) | Create Account
Close category search window
 

Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Mehrotra, S. ; Network for Comput. Nano Technol. & Birck Nano Technol. Center, Purdue Univ., West Lafayette, IN ; Paul, A. ; Luisier, M. ; Klimeck, G.

Impact of surface and transport, orientation on hole transport in p-type silicon nanowire MOSFET has been studied using atomistic 10-band sp3s*-SO tight-binding valence band model along with semi classical ballistic top-of-the-barrier approach for tri-gated devices. (100) and (110) surface orientations for <100> and <110> transport orientations were studied. Study of channel current and charge show that, due to heavy hole mass anisotropy, different confinement surfaces impact device performance differently.

Published in:

Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on

Date of Conference:

3-3 April 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.