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Experimental investigation on the origin of direction dependence of Si (110) hole mobility utilizing ultra-thin body pMOSFETs

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3 Author(s)
Shimizu, K. ; Inst. of Ind. Sci., Univ. of Tokyo, Tokyo ; Saraya, T. ; Hiramoto, T.

The direction dependence of hole mobility in (110) SOI pFETs has been systematically investigated for the first time utilizing a new device structure. It is newly found that the high hole mobility in Si (110)/<110> even at high electric field originates from not only the large subband energy difference but also lighter conductivity mass than Si (110)/<100> caused by quantum confinement.

Published in:

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Date of Conference:

15-17 Dec. 2008

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