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A 33.6-to-33.8 Gb/s Burst-Mode CDR in 90 nm CMOS Technology

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4 Author(s)
Lan-Chou Cho ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Chihun Lee ; Chao-Ching Hung ; Shen-Iuan Liu

A 33.6-33.8 Gb/s burst-mode clock/data recovery circuit (BMCDR) is presented in this paper. To reduce the data jitter and generate the high-frequency output clock, the LC gated voltage-controlled oscillator is presented. To receive and transmit the broadband data, a wideband input matching circuit and a wideband data buffer are presented, respectively. The phase selector is proposed to overcome the false phase lock due to the full-rate operation. This proposed BMCDR has been fabricated in a 90 nm CMOS process. The measured peak-to-peak and rms jitters for the recovered data are 7.56 ps and 1.15 ps, respectively, for a 33.72 Gb/s, 2 11 -1 PRBS. The measured bit error rate is less than 10-8 for a 33.72 Gb/s, 27 -1 PRBS. It consumes 73 mW without buffers from a 1.2 V supply.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 3 )