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Ion implanted MOSFET's with very short channel lengths

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6 Author(s)
R. H. Dennard ; IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y. ; F. H. Gaensslen ; H. N. Yu ; V. L. Rideout
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Ion implantation allows the fabrication of very small MOSFET switching devices with considerably thicker gate insulators. Capacitance from the source and drain to the substrate and to the gate is reduced by more than a factor of two compared to conventional structures. Conversely, for a given thickness, smaller devices can be achieved using ion implantation.

Published in:

IEEE Solid-State Circuits Society Newsletter  (Volume:12 ,  Issue: 1 )