By Topic

On the Possibility of Tunable-Gap Bilayer Graphene FET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Fiori, G. ; Dipt. di Ing. dell''Inf.: Elettron., Inf., Telecomun., Univ. di Pisa, Pisa ; Iannaccone, G.

We explore the device potential of a tunable-gap bilayer graphene (BG) FET exploiting the possibility of opening a bandgap in BG by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green's function formalism. We show that the concept works, but the bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large Ion/Ioff ratio for CMOS device operation.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )