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Punchthrough Enhanced Phototransistor Fabricated in Standard CMOS Process

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6 Author(s)
Xin Liu ; Coll. of Electron. Sci. & Eng., Jilin Univ., Changchun ; Shuxu Guo ; Chen Zou ; Du, Guotong
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A simple lateral structure phototransistor, combined with a normal phototransistor and a punchthrough transistor, has been successfully designed and fabricated in standard commercial CSMC 0.5- mum CMOS process. The proposed punchthrough enhancement mechanism provides a high optical gain of close to 107 for a low-level optical power of 7.0 times10-15W at a wavelength of 650 nm. Compared with conventional punchthrough phototransistors, a lower dark current of around 1 muA is obtained at a 2.0-V operating voltage.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )

Date of Publication:

March 2009

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