By Topic

Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kindl, D. ; Inst. of Phys., Acad. of Sci. of the Czech Republic, Prague ; Hubik, P. ; Mares, J.J. ; Kristofik, J.

Deep level transient spectroscopy (DLTS) measurements were carried out on silicon diodes prepared by Al-diffusion into n-type material. The main purpose of the experiments was to test our theory concerning the possibility of unambiguous interpretation of the DLTS spectrum. A simple method of correct assignment of the observed traps to either side of the junction is outlined. Using this method based on the dependence of normalized DLTS peak amplitude on the reverse bias, two electron traps and two hole traps were recognized in tested samples. At least three of these traps are probably related to quenched-in defects.

Published in:

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Date of Conference:

12-16 Oct. 2008