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Electrical behaviour of Au/InGaAsSb and Au/GaSb junctions

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3 Author(s)
Horvath, Z.J. ; Hungarian Acad. of Sci. Res. Inst. for Tech. Phys. & Mater. Sci., Budapest ; Rakovics, V. ; Podor, B.

Au contacts have been prepared to In0.12Ga0.88As0.11Sb0.89/GaSb:Te and to GaSb:Ge/GaSb: Te epitaxial structures. For the In0.12Ga0.88As0.11Sb0.89/GaSb:Te structure Au yielded relatively good Schottky contact, but the current-voltage characteristics exhibited two regions at low temperatures due to two competing parallel pathes with different apparent barrier heights, ideality factors, and series resistances. Au on GaSb:Ge/GaSb:Te epitaxial structures resulted in very good ohmic contact.

Published in:
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Date of Conference: 12-16 Oct. 2008

Page(s):
119 - 122
E-ISBN :
978-1-4244-2326-2
Print ISBN:
978-1-4244-2325-5
INSPEC Accession Number:
10455149
Conference Location :
Smolenice
Digital Object Identifier :
10.1109/ASDAM.2008.4743295
Product Type:
Conference Publications

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