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A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology

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10 Author(s)
Hamzaoglu, F. ; Intel Corp., Hillsboro, OR ; Zhang, K. ; Yih Wang ; Hong Jo Ahn
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A high-performance low-power 153 Mb SRAM is developed in 45 nm high-k Metal Gate technology. Dynamic SRAM PMOS forward-body-bias (FBB) and Active-Controlled SRAM VCC in Sleep are integrated in the design to lower Active-VCCmin and Standby Leakage, respectively. FBB improves the Active-VCCmin by up to 75 mV, and Active-Controlled SRAM VCC distribution tightened by 100 mV, both of which result in further power reduction. A 0.346 mum2 6T-SRAM bit-cell is used which is optimized for VCCmin, performance, leakage and area. The design operates at high-speed over a wide voltage range, and has a maximum frequency of 3.8 GHz at 1.1 V. The 16 KB Subarray was also used as the building block in on-die 6 MB Cache for Intel Core 2 Duo CPU in 45 nm technology.

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Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 1 )