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Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors

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5 Author(s)
Jeng-Tzong Sheu ; Inst. of Nanotechnol., Nat. Chiao Tung Univ., Hsinchu ; Po-Chun Huang ; Tzu-Shiun Sheu ; Chen-Chia Chen
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We have investigated the characteristics of gate-all-around (GAA) twin polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs). The NW channel and surrounding gate imparted the GAA twin NW TFT with superior channel controllability. Moreover, the combination of the high surface-to-volume ratio of the NW and the split channel structure led to highly efficient NH3 plasma treatment, which reduced the effective grain-boundary trap-state density. The GAA twin NW TFT exhibited greatly improved electrical performance, including a lower threshold voltage, a steeper subthreshold swing (114 mV/dec), a higher on/off current ratio (> 108), and a virtual absence of drain-induced barrier lowering (13 mV/V).

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )