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Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory

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12 Author(s)
Bipin Rajendran ; IBM T.J. Watson Res. Center, Yorktown Heights, NY ; Matt Breitwisch ; Ming-Hsiu Lee ; Geoffrey W. Burr
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The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.

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IEEE Electron Device Letters  (Volume:30 ,  Issue: 2 )