A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate

High source/drain concentration level, ultrashallow junction, and high-mobility channel are important for the requirements of nanoscale transistors. Microwave processing of semiconductors could offer distinct advantages over conventional RTP systems in some applications, and the anneal temperature is within the range of 300
^deg
C-500
^deg
C. By using a low-temperature microwave anneal, the sheet resistance and boron diffusion in the Si/Ge/Si substrate could be reduced effectively, and the crystalline structure of Si/Ge/Si is not damaged according to the TEM image and the XRD signals.