By Topic

A Comparative NBTI Study of \hbox {HfO}_{2} , \hbox {HfSiO}_{x} , and SiON p-MOSFETs Using UF-OTF I_{\rm DLIN} Technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Deora, S. ; Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai ; Maheta, V.D. ; Bersuker, G. ; Olsen, C.
more authors

The time, temperature, and oxide-field dependence of negative-bias temperature instability is studied in HfO2/TiN, HfSiOx/TiN, and SiON/poly-Si p-MOSFETs using ultrafast on-the-flyI DLIN technique capable of providing measured degradation from very short (approximately microseconds) to long stress time. Similar to rapid thermal nitrided oxide (RTNO) SiON, HfO2 devices show very high temperature-independent degradation at short (submilliseconds) stress time, not observed for plasma nitrided oxide (PNO) SiON and HfSiOx devices. HfSiOx shows lower overall degradation, higher long-time power-law exponent, field acceleration, and temperature activation as compared to HfO2, which are similar to the differences between PNO and RTNO SiON devices, respectively. The difference between HfSiOx and HfO2 can be attributed to differences in N density in the SiO2 IL of these devices.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )