Referenced Items are not available for this document.
A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm2/Vs and 6.1times1012 cm-2, respectively. To enable a maximum extrinsic transconductance gm, max of 2500 mS/mm the source resistance has been reduced to 0.1 Omegamiddotmm. An ft of 515 GHz was achieved for a 2 times 10 mum device. Based on this advanced 35 nm mHEMT technology very compact single-stage H-band amplifiers circuits have been realized demonstrating a high small-signal gain of more than 7 dB at 270 GHz.
Published in:
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Date of Conference: 25-29 May 2008
- Page(s):
- 1 - 4
- ISSN :
- 1092-8669
- E-ISBN :
- 978-1-4244-2259-3
- Print ISBN:
- 978-1-4244-2258-6
- INSPEC Accession Number:
- 10412037
- Conference Location :
- Versailles
- Digital Object Identifier :
- 10.1109/ICIPRM.2008.4702910
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
