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The effect of a shielding layer on breakdown voltage in a trench gate IGBT

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5 Author(s)
Jong-Seok Lee ; Korea University, Department of Electrical Engineering, Anam-Dong, Seongbuk-Gu, Seoul, 136-701, Korea ; Ho-Hyun Shin ; Han-Sin Lee ; Man young Sung
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In this paper we introduced the shielding layer concept in order to alleviate the electric field of concentrated on the trench bottom corner. The shielded trench gate IGBT is a trench gate IGBT with a P+ shielding layer bottom of a trench gate. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.

Published in:

2007 7th Internatonal Conference on Power Electronics

Date of Conference:

22-26 Oct. 2007