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Equivalent Circuit Model for the Gate Leakage Current in Broken Down \hbox {HfO}_{2}/\hbox {TaN/TiN} Gate Stacks

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4 Author(s)
Enrique Miranda ; Escola Tec. Super. d'Eng., Univ. Autonoma de Barcelona, Barcelona ; Kin-Leong Pey ; Rakesh Ranjan ; Chih-Hang Tung

We propose an equivalent circuit model for the post-breakdown (BD) current-voltage ( I-V) characteristics in HfO2/TaN/TiN gate stacks in n-MOSFETs. The model consists of two opposite-biased diodes with series resistances and a shunt leakage path. The circuit admits analytical solution using the Lambert W-function and is tested for both negative and positive gate biases in the voltage range of -1.5 to +1.5 V. We also show the versatility of the proposed approach to deal with the post-BD I- V when source and drain contacts are grounded or floating and analyze the obtained results in terms of the charge available for conduction.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 12 )