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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:29 Issue:12 Help

Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High- \kappa Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio

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2 Author(s)
Rispal, L. ; Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt ; Schwalke, U.

In this letter, we report on measurements of carbon nanotube (CNT) field-effect transistors with high on/off ratio to be used as nonvolatile memory cells operating at room temperature. Thousands of memory devices have been realized using a complete in situ fabrication method. The self-aligned fabrication process allows large-scale production of CNT memory devices with high yield. The memory function is obtained by the threshold voltage shift due to the highly reproducible hysteresis in the transfer characteristics. The ratio of the current levels between a logical ldquo1rdquo and a ldquo0rdquo is about 106.

Published in:
Electron Device Letters, IEEE  (Volume:29 ,  Issue: 12 )

Date of Publication: Dec. 2008

Page(s):
1349 - 1352
ISSN :
0741-3106
INSPEC Accession Number:
10324451
Digital Object Identifier :
10.1109/LED.2008.2005850
Product Type:
Journals & Magazines
Date of Publication :
07 November 2008
Date of Current Version :
21 November 2008
Issue Date :
Dec. 2008
Sponsored by :
IEEE Electron Devices Society

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