Referenced Items are not available for this document.
Extensive measurements of hot-hole injection probability from silicon into silicon dioxide covering a wide range of oxide fields and substrate biases are presented and compared with results previously published in the literature. It is found that, in the highly inhomogeneous electric fields typically needed to induce substrate hole injection, nonlocal effects take place that limit the possibility to accurately describe injection probability data by means of a unique set of lucky carrier model parameters.<
Published in:
Electron Device Letters, IEEE
(Volume:16
,
Issue:
10
)
Date of Publication: Oct. 1995
- Page(s):
- 442 - 444
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5076494
- Digital Object Identifier :
- 10.1109/55.464811
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct. 1995
- Sponsored by :
- IEEE Electron Devices Society
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