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Impact ionization and distribution functions in sub-micron nMOSFET technologies

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2 Author(s)
Bude, J.D. ; AT&T Bell Labs., Murray Hill, NJ, USA ; Mastrapasqua, Marco

The physics of impact ionization generated substrate current in 0.1 /spl mu/m nMOSFET's technologies is clarified by comparison of experiment and full-band Monte Carlo (MC) simulation for a wide range of biases. Quasiballistic transport is confirmed. It is shown for the first time that these devices allow extraction of ionization probabilities near threshold from substrate current measurements.<>

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 10 )

Date of Publication:

Oct. 1995

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