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Impact ionization and distribution functions in sub-micron nMOSFET technologies

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2 Author(s)
J. D. Bude ; AT&T Bell Labs., Murray Hill, NJ, USA ; M. Mastrapasqua

The physics of impact ionization generated substrate current in 0.1 μm nMOSFET's technologies is clarified by comparison of experiment and full-band Monte Carlo (MC) simulation for a wide range of biases. Quasiballistic transport is confirmed. It is shown for the first time that these devices allow extraction of ionization probabilities near threshold from substrate current measurements.

Published in:

IEEE Electron Device Letters  (Volume:16 ,  Issue: 10 )