Referenced Items are not available for this document.
A new hot-carrier degradation mode peculiar to MOSFET's fabricated on thin-film SOI is described. This degradation mode, which occurs in nMOSFET's more easily than in pMOSFET's, is due to suppression of parasitic bipolar action caused by recombination of excess carriers through hot-carrier-induced front interface-traps. Threshold voltage is significantly shifted by this phenomenon. The reliability lifetime defined by threshold voltage shift and drain current degradation is also discussed, considering the new degradation mode.<
Published in:
Electron Device Letters, IEEE
(Volume:16
,
Issue:
10
)
Date of Publication: Oct. 1995
- Page(s):
- 427 - 429
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5076489
- Digital Object Identifier :
- 10.1109/55.464806
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct. 1995
- Sponsored by :
- IEEE Electron Devices Society
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