Referenced Items are not available for this document.
Both n- and p-channel polycrystalline silicon (poly-Si) thin film transistors (TFT's) have been hydrogenated using the plasma ion implantation (PII) technique. Significant improvements in device characteristics have been obtained. Because PII is capable of greater dose rates than plasma immersion, it allows for significantly shorter process times than other methods investigated thus far.<
Published in:
Electron Device Letters, IEEE
(Volume:16
,
Issue:
10
)
Date of Publication: Oct. 1995
- Page(s):
- 421 - 423
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5076487
- Digital Object Identifier :
- 10.1109/55.464804
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct. 1995
- Sponsored by :
- IEEE Electron Devices Society
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