Referenced Items are not available for this document.
A Novel 4.5 
Capacitorless Semiconductor Memory Device
A Novel 4.5
This letter proposes a novel 4.5F2 capacitorless dynamic random access memory cell with a floating gate (FG) connected to drain via a gated p-n junction diode. The FG in the proposed memory device is for charge storage and can electrically be charged or discharged by current flowing through a gated p-n junction diode.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
12
)
Date of Publication: Dec. 2008
- Page(s):
- 1347 - 1348
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10324458
- Digital Object Identifier :
- 10.1109/LED.2008.2005740
- Product Type:
- Journals & Magazines
- Date of Publication :
- 03 October 2008
- Date of Current Version :
- 21 November 2008
- Issue Date :
- Dec. 2008
- Sponsored by :
- IEEE Electron Devices Society
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