Referenced Items are not available for this document.
In this paper, we demonstrate novel MESFETs based on individual GaN nanowires. The Pt/Au Schottky gates exhibited excellent two-terminal Schottky diode rectification behavior. The average effective Schottky barrier height was 0.87 eV, with an average ideality factor of 1.6. In addition, the Schottky gates efficiently modulated the conduction of the nanowires. The threshold gate voltages required for complete pinch off were as small as -2.6 V, and transconductances exceeded 1.4 muS. Subthreshold swings approaching 60 mV/decade and on/off current ratios of up to 5times108 were achieved. These results show that the Schottky gate has the potential to significantly improve the performance of GaN nanowire field-effect devices.
Published in:
Nanotechnology, IEEE Transactions on
(Volume:7
,
Issue:
6
)
Date of Publication: Nov. 2008
- Page(s):
- 760 - 765
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 10370702
- Digital Object Identifier :
- 10.1109/TNANO.2008.2005492
- Product Type:
- Journals & Magazines
- Date of Publication :
- 16 September 2008
- Date of Current Version :
- 30 December 2008
- Issue Date :
- Nov. 2008
- Sponsored by :
- IEEE Nanotechnology Council
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
