Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). We apologize for the inconvenience.
By Topic

Embedded Stress Sensors for Strained Technologies Process Control

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kasbari, M. ; Centre de Microelectron. de Provence, Ecole des Mines de St.- Etienne, Gardanne ; Delamare, R. ; Blayac, S. ; Rivero, C.
more authors

Mechanical stress management becomes a major issue for state-of-the-art CMOS technologies. Mechanical stress induced by the process steps is often at the origin of yield losses but also opportunities for technologies performance enhancement. Usual methods for mechanical stress measurement generally require offline measurements and are not compatible with fast correction of process parameters. We propose here embedded stress piezoresistive sensors to allow fast monitoring of mechanical stress and enable real time correction of the process parameters. The test vehicle presented here is dedicated to the gate structure stress monitoring. It is especially very sensitive to the nitride contact etch stop layer stress level. It is shown, in particular, that the structure is able to monitor process-related stress change in the nitride layer. Its feasibility, sensitivity, and relevance in an advanced process control scheme are investigated.

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:21 ,  Issue: 3 )