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We have clarified the difference in NBTI and 1/f noise of high-k/metal gate pMOSFETs between (110) and (100) oriented surfaces. Although the initial interface state density on (110) is higher than that on (100), the NBTI is better on the (110) surface. That is due to the different interface defect nature of interface defect states on (110) surface compared to (100). This difference has a strong impact on 1/f noise.