By Topic

Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain Ge NMOSFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Masaharu Kobayashi ; Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, CA, 94305, USA ; Atsuhiro Kinoshita ; Krishna Saraswat ; H. -S. Philip Wong
more authors

We successfully demonstrated Schottky barrier height modulation in metal/Ge Schottky junction by inserting an ultrathin interfacial SiN layer. The SiN layer suppressed strong Fermi level pinning in metal/Ge junction, which resulted in effective control of the Schottky barrier height. We systematically investigated its physics, for the first time, and almost zero Schottky barrier height was successfully obtained for electrons. We applied this technology to metal source/drain Ge NMOSFET and achieved low source/drain resistance.

Published in:

2008 Symposium on VLSI Technology

Date of Conference:

17-19 June 2008