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Experimental study of mobility in [110]- and [100]-directed multiple silicon nanowire GAA MOSFETs on (100) SOI

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5 Author(s)
Jiezhi Chen ; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153-8505, Japan ; Takuya Saraya ; Kousuke Miyaji ; Ken Shimizu
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Experimental investigations of silicon nanowire mobility characteristics on (100) SOI as shrinking nanowire width to sub-10 nm are reported. Accurate mobility estimations by advanced split CV method for 50~1000 nanowires are performed. For the first time, electron and hole mobility in [100]-directed nanowires are studied and compared with [110] nanowires. It is shown that both electron and hole mobility decreases monotonically and electron mobility of [100]-directed nanowire tends to be comparable to that of [110]-directed nanowire as decreasing nanowire width.

Published in:

2008 Symposium on VLSI Technology

Date of Conference:

17-19 June 2008