Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack

For the first time, ultra low I_OFF (16.5 pA/mum) and high I_ONN,P (2.27 mA/mum and 1.32 mA/mum) currents are obtained with a multi-channel CMOSFET (MCFET) architecture on SOI with a metal/high-K gate stack. This leads to the best I_ON/I_OFF ratios ever reported: 1.4 times 10⁸ (0.8 times 10⁸) for 50 nm n- (p-) MCFETs. We show, based on specifically developed integration process, characterization methods and analytical modeling, how those performances are obtained thanks to specific 3D MCFET features, in particular, transport properties, saturation regime and electrostatic behavior.