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Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

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13 Author(s)
Jaechul Park ; Semicond. Device & Mater. Lab., Samsung Adv. Inst. of Technol., Yongin ; Kim, Changjung ; Sunil Kim ; Song, Ihun
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In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot of the reciprocal of channel resistance versus gate voltage yields a threshold voltage of 3.5 V and a field-effect mobility of about 13.5 cm2/Vldrs. Furthermore, in a-GIZO TFTs, most of the current flows in the distance range of 0-0.5 mum from the channel edge and shorter than that in a-Si:H TFTs. Moreover, unlike a-Si:H TFTs, a-GIZO TFTs did not show an intersection point, because they did not contain a highly doped ohmic (n+) layer below the source/drain electrodes.

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Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )