High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$

We report Ir/TiO
₂
/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum
²
and a leakage current of 3 times 10
^-8
(25degC) or 6 times 10
^-7
(125degC) A/cm
²
at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa TiO
₂
, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.