By Topic

High Density and Low Leakage Current in  \hbox {TiO}_{2} MIM Capacitors Processed at 300 ^{\circ} \hbox {C}

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Cheng, C.H. ; Dept. of Mech. Eng., Nat. Chiao Tung Univ., Hsinchu ; Lin, S.H. ; Jhou, K.Y. ; Chen, W.J.
more authors

We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum2 and a leakage current of 3 times 10-8 (25degC) or 6 times 10-7 (125degC) A/cm2 at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )