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Novel Nickel Silicide Contact Technology Using Selenium Segregation for SOI N-FETs With Silicon–Carbon Source/Drain Stressors

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5 Author(s)
Hoong-Shing Wong ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Fang-Yue Liu ; Kah-Wee Ang ; Ganesh Samudra
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We explore a novel silicide contact technology for effective Schottky barrier height PhiBn and contact resistance reduction, which is compatible with an advanced silicon-carbon (Si1-xCx) source/drain (S/D) stressor technology. The new silicide contact technology incorporates selenium (Se) that is coimplanted with S/D dopants into the silicon-carbon S/D prior to nickel silicidation, leading to the segregation of Se at the NiSi:C/n-Si0.99 C0.01 interface and the achievement of excellent ohmic contact characteristics. We demonstrate that the Se-coimplantation process contributes to a 23% drive current enhancement in a strained silicon-on-insulator n-MOSFET. The enhancement is attributed to the decrease of external series resistance which is primarily due to the reduction of silicide contact resistance.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 8 )