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A common gate low noise amplifier with high linearity over UHF RFID bands

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6 Author(s)
Hyoung-Hwan Roh ; Department of Electrical Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk, Seoul, 136-702, Korea ; Kyoung-Tae Park ; Ha-Ryong Oh ; Yeung-Rak Seong
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A CMOS common gate LNA with high linearity over UHF mobile RFID bands is presented. A common gate configuration applied to design the proposed LNA overall leads to high linearity and wide band characteristics. Proposed LNA is fabricated with 0.35 mum (one poly, four metals) CMOS manufacturing technology. The proposed LNA shows 3.2 dB noise figure, 13.4 dB voltage gain with 1.4 dBm P1 dB.

Published in:

Electromagnetic Compatibility and 19th International Zurich Symposium on Electromagnetic Compatibility, 2008. APEMC 2008. Asia-Pacific Symposium on

Date of Conference:

19-23 May 2008