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Electrical Properties of Amorphous \hbox {Bi}_{5} \hbox {Nb}_{3}\hbox {O}_{15} Thin Film for RF MIM Capacitors

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9 Author(s)
Kyung-Hoon Cho ; Dept. of Mater. Sci. & Eng., Korea Univ., Seoul ; Chang-Hak Choi ; Kyoung Pyo Hong ; Joo-Young Choi
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Amorphous Bi5Nb3O15(B5 N3) film grown at 300degC showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/mum2 and a low dissipation factor of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm2 at 1 V. The quadratic and linear voltage coefficient of capacitances of the B5N3 film were 438 ppm/V2 and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/degC at 100 kHz. These results confirmed the potential of the amorphous B5N3 film as a good candidate material for a high-performance metal-insulator-metal capacitors.

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Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )