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New n-Type \hbox {TiO}_{2} Transparent Active Channel TFTs Fabricated With a Solution Process

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2 Author(s)
Park, Jae-Woo ; Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon ; Seunghyup Yoo

New metal-oxide thin-film transistors (MOxTFTs) with a solution-processed TiO2 transparent active channel are fabricated with a novel doping process that consists of a deposition of an ultrathin Ti layer on TiO2 films and a brief rapid thermal annealing. Contrary to an as-prepared device which does not show any appreciable TFT actions, devices with the proposed process exhibit a clear n-type TFT behavior with a saturation mobility of 0.12 cm2 V-1ldr s-1 and a threshold voltage of 11 V. A solution processibility and a low-cost manufacturability of TiO2 make the presented TFTs potentially attractive for cost-sensitive applications.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )

Date of Publication:

July 2008

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