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Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays

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9 Author(s)
Lupan, O. ; Dept. of Microelectron. & Semicond. Devices, Moldova Tech. Univ., Chisinau ; Chow, L. ; Ursaki, V. ; Monaico, E.
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Sn-doped ZnO nanorod arrays were synthesized by a novel method combining the aqueous solution process with post-growth rapid photothermal processing (RPP). The post-growth RPP of Sn-doped ZnO nanostrnctures at 700 degC in vacuum was found to result in a drastic decrease of the near-bandgap photoluminescence intensity. A comparison of the impact of RPP in Sn and AI doped samples is performed and the reasons of near-bandgap photoluminescence intensity decrease in Sn-doped samples are discussed.

Published in:

Semiconductor Conference, 2007. CAS 2007. International  (Volume:2 )

Date of Conference:

Oct. 15 2007-Sept. 17 2007