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Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays

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9 Author(s)
O. Lupan ; Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, MD-2004, Chisinau, Moldova; Department of Physics, University of Central Florida, Orlando, FL 32816-2385, U.S.A. E-mail:, ; L. Chow ; V. Ursaki ; E. Monaico
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Sn-doped ZnO nanorod arrays were synthesized by a novel method combining the aqueous solution process with post-growth rapid photothermal processing (RPP). The post-growth RPP of Sn-doped ZnO nanostrnctures at 700 degC in vacuum was found to result in a drastic decrease of the near-bandgap photoluminescence intensity. A comparison of the impact of RPP in Sn and AI doped samples is performed and the reasons of near-bandgap photoluminescence intensity decrease in Sn-doped samples are discussed.

Published in:

2007 International Semiconductor Conference  (Volume:2 )

Date of Conference:

Oct. 15 2007-Sept. 17 2007