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High-Efficiency GaN-Based Light-Emitting Diodes Fabricated With Metallic Hybrid Reflectors

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4 Author(s)
Hyunsoo Kim ; Opto Syst. Lab., Samsung Electro-Mech. Co., Ltd., Suwon ; Sung-Nam Lee ; Yongjo Park ; Tae-Yeon Seong

We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 mA), resulting in the improvement of the power efficiency by 10%.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 6 )