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A 9.2 mW resistive feedback CMOS low-noise amplifier with a 3-dB bandwidth of 3.94 GHz (4.04 -7.98 GHz) is presented. At 5.5 GHz, the fully integrated LNA achieves a measured gain above 24 dB, a noise figure of 2 dB, and an output IP3 of 21.5 dBm. The LNA draws 7.7 mA from the 1.2 V supply and utilizes a single compact low-Q on-chip inductor. The LNA is implemented in a 90-nm CMOS process and occupies a die area of only 0.022 mm2.