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High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer

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13 Author(s)

A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/ mum for n-channel and 1.30 mA/ mum for p-channel TSNWFETs with mid-gap TiN metal gate that are normalized by a nanowire diameter. It also shows good short-channel effects immunity down to 30-nm gate length due to the GAA structure and the nanowire channel. The effect of bottom parasitic transistor in TSNWFET is also investigated.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:7 ,  Issue: 2 )

Date of Publication:

March 2008

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